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Fundamental property of 6.X-nm EUV emission for the next generation lithography

Date: July 16th 2012
Time: 10:30 AM
Place: Institute of Computer Science, Lecture Hall (1st floor )

This presentation shows specific laser-produced plasma, for efficient beyond extreme ultraviolet (BEUV) source with peak emission around 6.X nm, which is attributed to hundreds of thousands of near-degenerate resonance lines in an unresolved transition array (UTA) from highly ionized ions. It is experimentally observed on the variation of the spectral behavior and the conversion efficiency in Gd and/or Tb plasmas, and the talk focuses on the fundamental property for the next generation lithography with efficient BEUV sources.

Takeshi Higashiguchi is an associate professor in Utsunomiya University, Japan. He received his Ph.D. in engineering from Utsunomiya University. His research activities have focused on short-wavelength light sources, laser-plasma interaction, and plasma photonics devices.