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Fundamental property of 6.X-nm EUV emission for the next generation lithography

Oddělení diodově čerpaných laserů a realizační tým sesterského projektu HiLASE pořádají seminář Takeshiho Higashiguchi z Department of Advanced Interdisciplinary Sciences, and Center for Optical Research & Education (CORE) Utsunomiya University. Přednáška se koná 16. července 2012 od 10:30 v přednáškové místnosti v 1. patře Ústavu informatiky AV ČR.

Seminář proběhne v anglickém jazyce.

Anotace:
This presentation shows specific laser-produced plasma, for efficient beyond extreme ultraviolet (BEUV) source with peak emission around 6.X nm, which is attributed to hundreds of thousands of near-degenerate resonance lines in an unresolved transition array (UTA) from highly ionized ions. It is experimentally observed on the variation of the spectral behavior and the conversion efficiency in Gd and/or Tb plasmas, and the talk focuses on the fundamental property for the next generation lithography with efficient BEUV sources.

O přednášejícím:
Takeshi Higashiguchi is an associate professor in Utsunomiya University, Japan. He received his Ph.D. in engineering from Utsunomiya University. His research activities have focused on short-wavelength light sources, laser-plasma interaction, and plasma photonics devices.